activity
20032026
most citedEnhancement of the Spin Accumulation at the Interface Between a Spin-Polarized Tunnel Junction and a Semiconductor

216 citations · 906 across the 13 of their papers we have counts for

collaborators
Showing 2020Show all

1 paper · 1 filter

cond-mat.mtrl-sci2020★ 32 cited

Electrical spin injection into InGaAs/GaAs quantum wells: a comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods

P. Barate, S. Liang, T. T. Zhang +16

An efficient electrical spin injection into an InGaAs/GaAs quantum well light emitting diode is demonstrated thanks to a CoFeB/MgO spin injector. The textured MgO tunnel barrier is…