activity
20032026
most citedEnhancement of the Spin Accumulation at the Interface Between a Spin-Polarized Tunnel Junction and a Semiconductor

216 citations · 906 across the 13 of their papers we have counts for

collaborators

13 papers

cond-mat.mes-hall2026

Rashba engineering at van der Waals interfaces

Rahul Sharma, Soumya Mukherjee, Fatima Ibrahim +26

Two-dimensional transition metal dichalcogenide (TMD) interfaces offer a versatile platform for studying emergent quantum phenomena and enabling novel device functionalities. When…

cond-mat.mes-hall2025★ 2 cited

Spin and Orbital Rashba response in ferroelectric polarized PtSe/MoSe/LiNbO heterostructures

Armando Pezo, Sylvain Massabeau, Filip Miljević +6

Recent studies using Terahertz Time-Domain Spectroscopy (THz-TDS) with spintronic emitters as a source have revealed distinct signatures of the Rashba effect. This effect, which ar…

cond-mat.mes-hall2025★ 14 cited

Quantum Kinetic Anatomy of Electron Angular Momenta Edge Accumulation

T. Valet, H. Jaffres, V. Cros +1

Controlling electron's spin and orbital degrees of freedom has been a major research focus over the past two decades, as it underpins the electrical manipulation of magnetization.…

cond-mat.mes-hall2025★ 2 cited

Terahertz time-domain signatures of the inverse Edelstein effect in topological-insulator|ferromagnet heterostructures

Genaro Bierhance, Chihun In, Enzo Rongione +14

Three-dimensional topological insulators possess topologically protected surface states with spin-momentum locking, which enable spin-charge-current interconversion (SCI) by the in…

cond-mat.mtrl-sci2024

Interfacial spin-orbitronic effects controlled with different oxidation levels at the Co|Al interface

Sachin Krishnia, Libor Vojáček, Tristan Da Câmara Santa Clara Gomes +15

Perpendicular magnetic anisotropy (PMA) and Dzyaloshinskii-Moriya interactions are key interactions in modern spintronics. These interactions are thought to be dominated by the oxi…

cond-mat.mtrl-sci2020★ 32 cited

Electrical spin injection into InGaAs/GaAs quantum wells: a comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods

P. Barate, S. Liang, T. T. Zhang +16

An efficient electrical spin injection into an InGaAs/GaAs quantum well light emitting diode is demonstrated thanks to a CoFeB/MgO spin injector. The textured MgO tunnel barrier is…

cond-mat.mtrl-sci2017★ 75 cited

Large enhancement of the spin Hall effect in Au by scattering with side-jump on Ta impurities

P. Laczkowski, Y. Fu, H. Yang +16

We present measurements of the Spin Hall Effect (SHE) in AuW and AuTa alloys for a large range of W or Ta concentrations by combining experiments on lateral spin valves and Ferroma…

cond-mat.mtrl-sci2012★ 89 cited

Crossover from spin accumulation into interface states to spin injection in the germanium conduction band

A. Jain, J. -C. Rojas-Sanchez, M. Cubukcu +18

Electrical spin injection into semiconductors paves the way for exploring new phenomena in the area of spin physics and new generations of spintronic devices. However the exact rol…

cond-mat.mtrl-sci2011★ 65 cited

Electrical spin injection and detection in Germanium using three terminal geometry

A. Jain, L. Louahadj, J. Peiro +12

In this letter, we report on successful electrical spin injection and detection in \textit{n}-type germanium-on-insulator (GOI) using a Co/Py/AlO spin injector and 3-te…

cond-mat.mes-hall2011★ 188 cited

Spin precession and inverted Hanle effect in a semiconductor near a finite-roughness ferromagnetic interface

S. P. Dash, S. Sharma, J. C. Le Breton +5

Although the creation of spin polarization in various non-magnetic media via electrical spin injection from a ferromagnetic tunnel contact has been demonstrated, much of the basic…

cond-mat.mtrl-sci2008★ 216 cited

Enhancement of the Spin Accumulation at the Interface Between a Spin-Polarized Tunnel Junction and a Semiconductor

M. Tran, H. Jaffres, C. Deranlot +4

We report on spin injection experiments at a Co/AlO/GaAs interface with electrical detection. The application of a transverse magnetic field induces a large voltage drop $Δ…

cond-mat.mtrl-sci2006★ 134 cited

Semiconductors between spin-polarized source and drain

A. Fert, J. -M. George, H. Jaffres +1

Injecting spins into a semiconductor channel and transforming the spin information into a significant electrical output signal is a long standing problem in spintronics. Actually,…

cond-mat.mtrl-sci2003★ 89 cited

Magnetization reversal by injection and transfer of spin: experiments and theory

A. Fert, V. Cros, J. -M. George +7

Reversing the magnetization of a ferromagnet by spin transfer from a current, rather than by applying a magnetic field, is the central idea of an extensive current research. After…