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20072026
most citedExcitons in atomically thin transition metal dichalcogenides

2.1k citations · 2.4k across the 22 of their papers we have counts for

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cond-mat.mes-hall2026

Probing Nonlinear Interactions of Dipolar Interlayer Excitons in MoSe/WSe Heterobilayers

Sai Shradha, Luc F. Oswald, Md Tarik Hossain +10

Interlayer excitons in transition-metal dichalcogenide heterobilayers possess intrinsic out-of-plane dipole moments, providing a platform for investigating exciton-exciton interact…

cond-mat.mes-hall2025★ 8 cited

Impact of charge transfer excitons on unidirectional exciton transport in lateral TMD heterostructures

Roberto Rosati, Sai Shradha, Julian Picker +3

Lateral heterostructures built of monolayers of transition metal dichalcogenides (TMDs) are characterized by a thin 1D interface exhibiting a large energy offset. Recently, the for…

cond-mat.mes-hall2022★ 14 cited

Optical detection of long electron spin transport lengths in a monolayer semiconductor

Lei Ren, Laurent Lombez, Cedric Robert +8

Using a spatially-resolved optical pump-probe experiment, we measure the lateral transport of spin/valley polarized electrons over very long distances (tens of micrometers) in a si…

cond-mat.mes-hall2016★ 76 cited

Intrinsic exciton states mixing and non-linear optical properties in transition metal dichalcogenide monolayers

M. M. Glazov, L. E. Golub, G. Wang +3

Optical properties of transition metal dichalcogenides monolayers are controlled by the Wannier-Mott excitons forming a series of , , ,... hydrogen-like states. We deve…

cond-mat.mes-hall2016★ 16 cited

Hyperfine coupling of hole and nuclear spins in symmetric GaAs quantum dots

M. Vidal, M. V. Durnev, L. Bouet +10

In self assembled III-V semiconductor quantum dots, valence holes have longer spin coherence times than the conduction electrons, due to their weaker coupling to nuclear spin bath…

cond-mat.mes-hall2014★ 16 cited

Charge tuning in [111] grown GaAs droplet quantum dots

L. Bouet, M. Vidal, T. Mano +10

We demonstrate charge tuning in strain free GaAs/AlGaAs quantum dots (QDs) grown by droplet epitaxy on a GaAs(111)A substrate. Application of a bias voltage allows the controlled c…

cond-mat.mes-hall2014★ 5 cited

Vanishing fine structure splittings in telecom wavelength quantum dots grown on (111)A surfaces by droplet epitaxy

X. Liu, N. Ha, H. Nakajima +7

The emission cascade of a single quantum dot is a promising source of entangled photons. A prerequisite for this source is the use of a symmetric dot analogous to an atom in a vacu…

cond-mat.mes-hall2013★ 47 cited

Nuclear magnetization in gallium arsenide quantum dots at zero magnetic field

G. Sallen, S. Kunz, T. Amand +8

Optical and electrical control of the nuclear spin system allows enhancing the sensitivity of NMR applications and spin-based information storage and processing. Dynamic nuclear po…

cond-mat.mes-hall2012★ 27 cited

Magnetic field induced valence band mixing in [111] grown semiconductor quantum dots

M. V. Durnev, M. M. Glazov, E. L. Ivchenko +11

We present a microscopic theory of the magnetic field induced mixing of heavy-hole states +/- 3/2 in GaAs droplet dots grown on (111)A substrates. The proposed theoretical model ta…