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cond-mat.mtrl-sci2020★ 22 cited
Ultrathin perpendicular free layers for lowering the switching current in STT-MRAM
Tiffany S. Santos, Goran Mihajlovic, Neil Smith +4
The critical current density required for switching the magnetization of the free layer (FL) in a spin-transfer torque magnetic random access memory (STT-MRAM) cell is pro…
cond-mat.mtrl-sci2007★ 103 cited
Enhanced magneto-transport at high bias in quasi-magnetic tunnel junctions with EuS spin-filter barriers
T. Nagahama, T. S. Santos, J. S. Moodera
In quasi-magnetic tunnel junctions (QMTJs) with a EuS spin filter tunnel barrier between Al and Co electrodes, we observed large magnetoresistance (MR). The bias dependence shows a…