417 citations · 2.3k across the 36 of their papers we have counts for
6 papers · 1 filter
The quantum Hall ferromagnet at high filling factors: A magnetic field induced Stoner transition
B. A. Piot, D. K. Maude, M. Henini +7
Spin splitting in the integer quantum Hall effect is investigated for a series of AlGaAs/GaAs heterojunctions and quantum wells. Magnetoresistance measurements are pe…
The microwave induced resistance response of a high mobility 2DEG from the quasi-classical limit to the quantum Hall regime
S. A. Studenikin, M. Byszewski, D. K. Maude +6
Microwave induced resistance oscillations (MIROs) were studied experimentally over a very wide range of frequencies ranging from ~20 GHz up to ~4 THz, and from the quasi-classical…
Exciton lifetime in InAs/GaAs quantum dot molecules
C. Bardot, M. Schwab, M. Bayer +3
The exciton lifetimes in arrays of InAs/GaAs vertically coupled quantum dot pairs have been measured by time-resolved photoluminescence. A considerable reduction of by…
The influence of the long-lived quantum Hall potential on the characteristics of quantum devices
M. Pioro-Ladriere, A. Usher, A. S. Sachrajda +5
Novel hysteretic effects are reported in magneto-transport experiments on lateral quantum devices. The effects are characterized by two vastly different relaxation times (minutes a…
Non-linear exciton spin-splitting in single InAs/GaAs self-assembled quantum structures in ultrahigh magnetic fields
A. Babinski, G. Ortner, S. Raymond +6
We report on the magnetic field dispersion of the exciton spin-splitting and diamagnetic shift in single InAs/GaAs quantum dots (QDs) and dot molecules (QDMs) up to = 28 T. Onl…
The origin of switching noise in GaAs/AlGaAs lateral gated devices
M. Pioro-Ladrière, J. H. Davies, A. R. Long +7
We have studied the origin of switching (telegraph) noise at low temperature in lateral quantum structures defined electrostatically in GaAs/AlGaAs heterostructures by surface gate…