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cond-mat.mes-hall2018
Strongly correlated proton-doped perovskite nickelate memory devices
Koushik Ramadoss, Fan Zuo, Yifei Sun +8
We demonstrate memory devices based on proton doping and re-distribution in perovskite nickelates (RNiO3, {R=Sm,Nd}) that undergo filling-controlled Mott transition. Switching spee…
cond-mat.mes-hall2013★ 281 cited
Voltage-triggered Ultra-fast Metal-insulator Transition in Vanadium Dioxide Switches
You Zhou, Xiaonan Chen, Changhyun Ko +3
Electrically driven metal-insulator transition in vanadium dioxide (VO2) is of interest in emerging memory devices, neural computation, and high speed electronics. We report on the…
cond-mat.mes-hall2007★ 17 cited
Observation of a uniform temperature dependence in the electrical resistance across the structural phase transition in thin film vanadium oxide ()
R. G. Mani, S. Ramanathan
An electrical study of thin films in the vicinity of the structural phase transition at shows (a) that the electrical resistance follows …