115 citations · 877 across the 32 of their papers we have counts for
32 papers
Molecular Nitrogen Formation in Nitrogen-Implanted (100) Revealed by Temperature-Dependent -edge XANES
I. N. Demchenko, Y. Syryanyy, A. Shokri +13
The realization of -type doping in wide-band-gap oxide semiconductors remains a major challenge, particularly in where nitrogen has long been considered a potential…
Temperature dependence of the bandgap of Eu doped {ZnCdO/ZnO}30 multilayer structures
A. Lysak, E. Przeździecka, A. Wierzbicka +5
In situ Eu-doped {ZnCdO/ZnO}30 multilayer systems were grown on p-type Si-substrates and on quartz substrates by plasma-assisted molecular beam epitaxy. Various Eu concentrations i…
Effect of rapid thermal annealing on short period {CdO/ZnO}m SLs grown on m-Al2O3
A. Lysak, E. Przeździecka, R. Jakiela +6
Here, we report on the characterization of {CdO/ZnO}m superlattice structures (SLs) grown by plasma assisted molecular beam epitaxy. The properties of as-grown and annealed SLs dep…
Observation of Weyl and Dirac fermions at smooth topological Volkov-Pankratov heterojunctions
J. Bermejo-Ortiz, G. Krizman, R. Jakiela +6
Weyl and Dirac relativistic fermions are ubiquitous in topological matter. Their relativistic character enables high energy physics phenomena like the chiral anomaly to occur in so…
Improved-Sensitivity Integral SQUID Magnetometry of (Ga,Mn)N Thin Films in Proximity to Mg-doped GaN
Katarzyna Gas, Gerd Kunert, Piotr Dluzewski +3
Nominally 45 nm GaN:Mg/ 5 nm (Ga,Mn)N / 45 nm GaN:Mg trilayers structures prepared by molecular beam epitaxy on GaN-buffered Al2O3 substrates are investigated to verify whether the…
Evidence of hydrogen diffusion in n-type GaN
Rafal Jakiela, Adam Barcz
The control over impurities like hydrogen and oxygen is of key importance in nitride-based semiconducting due to their unrivaled applicability in optoelectronics and high power/hig…