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Robustness of momentum-indirect interlayer excitons in MoS2/WSe2 heterostructure against charge carrier doping
Ekaterina Khestanova, Tatyana Ivanova, Roland Gillen +13
Monolayer transition-metal dichalcogenide (TMD) semiconductors exhibit strong excitonic effects and hold promise for optical and optoelectronic applications. Yet, electron doping o…
Residual Metallic Contamination of Transferred Chemical Vapor Deposited Graphene
Grzegorz Lupina, Julia Kitzmann, Ioan Costina +15
Integration of graphene with Si microelectronics is very appealing by offering potentially a broad range of new functionalities. New materials to be integrated with Si platform mus…
Magnetotransport in graphene on silicon side of SiC
P. Vasek, L. Smrcka, P. Svoboda +6
We have studied the transport properties of graphene grown on silicon side of SiC. Samples under study have been prepared by two different growth methods in two different laborator…
Carrier scattering from dynamical magneto-conductivity in quasi-neutral epitaxial graphene
M. Orlita, C. Faugeras, R. Grill +6
The energy-dependence of the electronic scattering time is probed by Landau level spectroscopy in quasi neutral multilayer epitaxial graphene. From the Landau levels broadening we…
Bilayer graphene inclusions in rotational-stacked multilayer epitaxial graphene
M. Orlita, C. Faugeras, J. Borysiuk +8
Additional component in multi-layer epitaxial graphene grown on the C-terminated surface of SiC, which exhibits the characteristic electronic properties of a AB-stacked graphene bi…
Quasi-classical cyclotron resonance of Dirac fermions in highly doped graphene
A. M. Witowski, M. Orlita, R. Stepniewski +6
Cyclotron resonance in highly doped graphene has been explored using infrared magnetotransmission. Contrary to previous work, which only focused on the magneto-optical properties o…