366 citations · 405 across the 4 of their papers we have counts for
3 papers · 1 filter
Variability and Reliability of Graphene Field-Effect Transistors with CaF2 Insulators
Yury Yu. Illarionov, Theresia Knobloch, Burkay Uzlu +11
Graphene is a promising material for applications as a channel in graphene field-effect transistors (GFETs) which may be used as a building block for optoelectronics, high-frequenc…
On the suitability of hBN as an insulator for 2D material-based ultrascaled CMOS devices
Theresia Knobloch, Yury Yu. Illarionov, Fabian Ducry +8
Complementary metal oxide semiconductor (CMOS) logic circuits at the ultimate scaling limit place the utmost demands on the properties of all materials involved. The requirements f…
Meeting the Scaling Challenge for Post-Silicon Nanoelectronics using CaF2 Insulators
Yury Yu. Illarionov, Alexander G. Banshchikov, Dmitry K. Polyushkin +10
Two-dimensional (2D) semiconductors have been suggested both for ultimately-scaled field-effect transistors (FETs) and More-than-Moore nanoelectronics. However, these targets can n…