239 citations · 1.6k across the 50 of their papers we have counts for
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Transport properties of band engineered p-n heterostructures of epitaxial BiSe/(BiSb)(TeSe) topological insulators
T. Mayer, H. Werner, F. Schmid +6
The challenge of parasitic bulk doping in Bi-based 3D topological insulator materials is still omnipresent, especially when preparing samples by molecular beam epitaxy (MBE). Here,…
Gate-tunable large magnetoresistance in an all-semiconductor spin-transistor-like device
Martin Oltscher, Franz Eberle, Thomas Kuczmik +5
A large spin-dependent and electric field-tunable magnetoresistance of a two-dimensional electron system (2DES) is a key ingredient for the realization of many novel concepts for s…
Determination of hole g-factor in InAs/InGaAs/InAlAs quantum wells by magneto-photoluminescence studies
Ya. V. Terent'ev, S. N. Danilov, M. V. Durnev +5
Circularly-polarized magneto-photoluminescence (magneto-PL) technique has been applied to investigate Zeeman effect in InAs/InGaAs/InAlAs quantum wells (QWs) in Faraday geometry. S…
Transport and Capture Properties of Auger-Generated High-Energy Carriers in (AlInGa)N Quantum Well Structures
A. Nirschl, M. Binder, M. Schmid +7
Recent photoluminescence experiments presented by M. Binder et al. [Appl. Phys. Lett. 103, 071108 (2013)] demonstrated the visualization of high-energy carriers generated by Auger…
Giant enhancement of spin detection sensitivity in (Ga,Mn)As/GaAs Esaki diodes
Junichi Shiogai, Mariusz Ciorga, Martin Utz +6
We investigate the correlation between spin signals measured in three-terminal (3T) geometry by the Hanle effect and the spin accumulation generated in a semiconductor channel in a…
Nonuniform current density and spin accumulation in a 1 μm thick n-GaAs channel
Bernhard Endres, Mariusz Ciorga, Robert Wagner +6
The spin accumulation in an n-GaAs channel produced by spin extraction into a (Ga,Mn)As contact is measured by cross-sectional imaging of the spin polarization in GaAs. The spin po…