activity
20242026
most citedHigh yield, low disorder Si/SiGe heterostructures for spin qubit devices manufactured in a BiCMOS pilot line

1 citations · 1 across the 3 of their papers we have counts for

collaborators

6 papers

cond-mat.mes-hall2026

Increasing valley splitting in Si/SiGe by practically achievable heterostructure profiles

Lukas Cvitkovich, Peter Stano, Dominique Bougeard +2

Silicon spin qubits are marred by the valley degeneracy of the conduction band. In a nanodevice, the degeneracy is lifted by interfaces and alloy disorder, but the arising valley s…

cond-mat.mes-hall2025

Active Noise Reduction in Si/SiGe Gated Quantum Dots

Rajat Bharadwaj, Parvathy Gireesan, Harikrishnan Sundaresan +5

Solid-state quantum technologies such as quantum dot qubits and quantum electrical metrology circuits rely on quantum phenomena at ultra-low energies, making them highly sensitive…

cond-mat.mes-hall2025

Fabrication, characterization and mechanical loading of Si/SiGe membranes for spin qubit devices

Lucas Marcogliese, Ouviyan Sabapathy, Rudolf Richter +3

Si/SiGe heterostructures on bulk Si substrates have been shown to host high fidelity electron spin qubits. Building a scalable quantum processor would, however, benefit from furthe…

cond-mat.mes-hall20251 cited

High yield, low disorder Si/SiGe heterostructures for spin qubit devices manufactured in a BiCMOS pilot line

Alberto Mistroni, Marco Lisker, Yuji Yamamoto +13

The prospect of achieving fault-tolerant quantum computing with semiconductor spin qubits in Si/SiGe heterostructures relies on the integration of a large number of identical devic…

cond-mat.mes-hall2024

Industrially fabricated single-electron quantum dots in Si/Si-Ge heterostructures

Till Huckemann, Pascal Muster, Wolfram Langheinrich +12

This paper reports the compatibility of heterostructure-based spin qubit devices with industrial CMOS technology. It features Si/Si-Ge quantum dot devices fabricated using Infineon…

cond-mat.mes-hall2024

Impact of biased cooling on the operation of undoped silicon quantum well field-effect devices for quantum circuit applications

Laura K. Diebel, Lukas G. Zinkl, Andreas Hötzinger +4

Gate-tunable semiconductor nanosystems are getting more and more important in the realization of quantum circuits. While such devices are typically cooled to operation temperature…