13 citations · 33 across the 13 of their papers we have counts for
13 papers
Fabrication-free assessment of microwave losses in germanium-based dielectrics and superconductors
Haoran Lu, Kushagra Aggarwal, Xiangqin Wang +10
We present a flip-chip-based sensing scheme to measure effective microwave losses associated with target materials for quantum technologies, without requiring any device fabricatio…
Disorder signatures emerging at millikelvin temperatures in Si/SiGe field-effect stacks
Lino Visser, Alberto Mistroni, Yuji Yamamoto +9
The performance and scalability of electron spin qubits based on gate-defined quantum-dots in undoped Si/SiGe field-effect stacks remain constrained by disorder originating from th…
Multi-level π-junction in a proximitized Ge/SiGe quantum dot probed by an on-chip superconducting microwave resonator
Luigi Ruggiero, Vera Jo Weibel, Pauline Drexler +5
Using on-chip microwave measurements, we investigate multilevel -junctions formed by proximitized quantum dot (QD) in a germanium (Ge)/silicon-germanium (SiGe) heterostructure.…
Increasing valley splitting in Si/SiGe by practically achievable heterostructure profiles
Lukas Cvitkovich, Peter Stano, Dominique Bougeard +2
Silicon spin qubits are marred by the valley degeneracy of the conduction band. In a nanodevice, the degeneracy is lifted by interfaces and alloy disorder, but the arising valley s…
High-quality and field resilient microwave resonators on Ge/SiGe quantum well heterostructures
Luigi Ruggiero, Carlo Ciacca, Pauline Drexler +5
Superconducting resonators integrated with Ge quantum wells (QWs) offer a promising platform for hybrid quantum devices. Yet, in the most common heterostructure architectures, they…
Active Noise Reduction in Si/SiGe Gated Quantum Dots
Rajat Bharadwaj, Parvathy Gireesan, Harikrishnan Sundaresan +5
Solid-state quantum technologies such as quantum dot qubits and quantum electrical metrology circuits rely on quantum phenomena at ultra-low energies, making them highly sensitive…
Fabrication, characterization and mechanical loading of Si/SiGe membranes for spin qubit devices
Lucas Marcogliese, Ouviyan Sabapathy, Rudolf Richter +3
Si/SiGe heterostructures on bulk Si substrates have been shown to host high fidelity electron spin qubits. Building a scalable quantum processor would, however, benefit from furthe…
High yield, low disorder Si/SiGe heterostructures for spin qubit devices manufactured in a BiCMOS pilot line
Alberto Mistroni, Marco Lisker, Yuji Yamamoto +13
The prospect of achieving fault-tolerant quantum computing with semiconductor spin qubits in Si/SiGe heterostructures relies on the integration of a large number of identical devic…
Industrially fabricated single-electron quantum dots in Si/Si-Ge heterostructures
Till Huckemann, Pascal Muster, Wolfram Langheinrich +12
This paper reports the compatibility of heterostructure-based spin qubit devices with industrial CMOS technology. It features Si/Si-Ge quantum dot devices fabricated using Infineon…
Impact of biased cooling on the operation of undoped silicon quantum well field-effect devices for quantum circuit applications
Laura K. Diebel, Lukas G. Zinkl, Andreas Hötzinger +4
Gate-tunable semiconductor nanosystems are getting more and more important in the realization of quantum circuits. While such devices are typically cooled to operation temperature…
Optimizing ToF-SIMS Depth Profiles of Semiconductor Heterostructures
Jan Tröger, Reinhard Kersting, Birgit Hagenhoff +5
The continuous technological development of electronic devices and the introduction of new materials leads to ever greater demands on the fabrication of semiconductor heterostructu…
Atomistic compositional details and their importance for spin qubits in isotope-purified silicon-germanium quantum wells
Jan Klos, Jan Tröger, Jens Keutgen +10
Understanding crystal characteristics down to the atomistic level increasingly emerges as a crucial insight for creating solid state platforms for qubits with reproducible and homo…
Local laser-induced solid-phase recrystallization of phosphorus-implanted Si/SiGe heterostructures for contacts below 4.2 K
Malte Neul, Isabelle V. Sprave, Laura K. Diebel +6
Si/SiGe heterostructures are of high interest for high mobility transistor and qubit applications, specifically for operations below 4.2 K. In order to optimize parameters such as…