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20002022
most citedCarrier-induced ferromagnetism in p-Zn1-xMnxTe

230 citations · 697 across the 15 of their papers we have counts for

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cond-mat.mtrl-sci2022★ 11 cited

Current-induced magnetization reversal in (Ga,Mn)(Bi,As) epitaxial layer with perpendicular magnetic anisotropy

Tomasz Andrearczyk, Janusz Sadowski, Krzysztof Dybko +2

Pulsed current-induced magnetization reversal is investigated in the layer of (Ga,Mn)(Bi,As) dilute ferromagnetic semiconductor (DFS) epitaxially grown under tensile misfit strain…

cond-mat.mtrl-sci2016

Novel Quaternary Dilute Magnetic Semiconductor (Ga,Mn)(Bi,As): Magnetic and Magneto-Transport Investigations

K. Levchenko, T. Andrearczyk, J. Z. Domagala +6

Magnetic and magneto-transport properties of thin layers of the (Ga,Mn)(Bi,As) quaternary dilute magnetic semiconductor grown by the low-temperature molecular-beam epitaxy techniqu…

cond-mat.mtrl-sci2015★ 4 cited

Effect of Misfit Strain in (Ga,Mn)(Bi,As) Epitaxial Layers on their Magnetic and Magneto-Transport Properties

K. Levchenko, T. Andrearczyk, J. Z. Domagala +5

Effect of misfit strain in the layers of (Ga,Mn)(Bi,As) quaternary diluted magnetic semiconductor, epitaxially grown on either GaAs substrate or (In,Ga)As buffer, on their magnetic…

cond-mat.mtrl-sci2014★ 4 cited

Magnetic and magneto-transport characterization of (Ga,Mn)(Bi,As) epitaxial layers

K. Levchenko, T. Andrearczyk, J. Z. Domagala +3

High-quality layers of the (Ga,Mn)(Bi,As) quaternary compound semiconductor have been grown by the low-temperature molecular-beam epitaxy technique. An effect of Bi incorporation i…

cond-mat.mtrl-sci2013

Analysis of the and + optical transitions in (Ga,Mn)As epitaxial layers

L. Gluba, O. Yastrubchak, G. Sek +8

The diluted (Ga,Mn)As became a model ferromagnetic semiconductor, however there is still a disagreement on the source of its magnetism. The divergences arise from the results indic…

cond-mat.mtrl-sci2013★ 18 cited

Effect of low-temperature annealing on the electronic- and band-structure of (Ga,Mn)As epitaxial layers

O. Yastrubchak, T. Andrearczyk, J. Z. Domagala +4

The effect of outdiffusion of Mn interstitials from (Ga,Mn)As epitaxial layers, caused by post-growth low-temperature annealing, on their electronic- and band-structure properties…