3 papers
cond-mat.mtrl-sci2026
Net and Hidden Spin-Valley Locking Enable Ultrahigh Hole Mobility in Covalent Bulk WN
Rong-Tian Pang, Zhongjuan Han, Jiayi Gong +3
High carrier mobility at room temperature underpins high-performance electronics, yet high hole mobility remains rare in bulk semiconductors. Spin-valley locking can suppress inter…
cond-mat.mtrl-sci2026
Ultrahigh Intrinsic Hole Mobilities in N (= Mo and W) at Room Temperature
Zhongjuan Han, Rong-Tian Pang, Wu Xiong +3
High-mobility -type semiconductors are essential for advanced electronic devices but remain scarce. Here, using a hierarchical screening framework that combines first-principles…
cond-mat.mtrl-sci2024
Excitonic Instability in Ta2Pd3Te5 Monolayer
Jingyu Yao, Haohao Sheng, Ruihan Zhang +7
By systematic theoretical calculations, we have revealed an excitonic insulator (EI) in the Ta2Pd3Te5 monolayer. The bulk Ta2Pd3Te5 is a van der Waals (vdW) layered compound, where…