Ultrahigh Intrinsic Hole Mobilities in $M$N${}_2$ ($M$= Mo and W) at Room Temperature

Abstract

High-mobility $p$-type semiconductors are essential for advanced electronic devices but remain scarce. Here, using a hierarchical screening framework that combines first-principles calculations with Boltzmann transport theory, we identify $M$N${}_2$ ($M$= Mo and W) family as polar semiconductors with exceptionally high intrinsic hole mobilities. In particular, 1H-WN${}_2$ exhibits a room-temperature hole mobility exceeding $10^4$~$\mathrm{c}{\mathrm{m}}^2{\mathrm{V}}^{-1}{\mathrm{s}}^{-1}$. This exceptional transport performance arises from the synergistic suppression of polar-optical-phonon and acoustic-phonon scattering, together with a reduced intervalley-scattering phase space induced by spin--valley locking. These effects arise from anomalously small Born effective charges, strong covalent N--N bonds, and orbital hybridization between N-$2p_x$/$2p_y$ and W-$5d_{xy}$/$5d_{x^2-y^2}$ in the N${}_2$-dimer-based structure. Our results establish MoN${}_2$ and WN${}_2$ as a promising class of high-mobility polar semiconductors and introduce a crystal-structure-based strategy for concurrently suppressing multiple electron--phonon scattering channels, thereby revising design principles for high-mobility materials.

7 pages, 4 figures