23 citations · 39 across the 4 of their papers we have counts for
3 papers · 1 filter
Nanoscale graphitization and defect evolution in silicon-vacancy center-containing nanodiamonds under high-pressure high-temperature annealing
M. De Feudis, B. Yavkin, L. Henry +6
Group-IV color centers, such as the silicon-vacancy (SiV) defect, are highly promising for solid-state quantum technologies. However, nanodiamonds typically exhibit significant lat…
Efficient and all-carbon electrical readout of a NV based quantum sensor
Guillaume Villaret, Ludovic Mayer, Martin Schmidt +6
The spin readout of an ensemble of nitrogen-vacancy (NV) centers in diamond can be realized by a photoconductive detection that is a complementary method to the optical detection o…
Optical properties of SiV and GeV color centers in nanodiamonds under hydrostatic pressures up to 180 GPa
Baptiste Vindolet, Marie-Pierre Adam, Loïc Toraille +14
We investigate the optical properties of silicon-vacancy (SiV) and germanium-vacancy (GeV) color centers in nanodiamonds under hydrostatic pressure up to 180 GPa. The nanodiamonds…