37 citations · 110 across the 7 of their papers we have counts for
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cond-mat.mtrl-sci2016★ 1 cited
First principle thermodynamic study of oxygen vacancy at metal/oxide interface
Guanchen Li, Eric Tea, Jianqiu Huang +1
The oxygen vacancy is a crucial intrinsic defect in metal-ultrathin oxide semiconductor heterostructures, and its formation at an interface is of great importance in determining th…
cond-mat.mtrl-sci2016★ 25 cited
Atomic bonding and electrical potential at metal/oxide interfaces, a first principle study
Eric Tea, Jianqiu Huang, Guanchen Li +1
A number of electronic devices involve metal/oxide interfaces in their structure where the oxide layer plays the role of electrical insulator. As the downscaling of devices continu…
cond-mat.mtrl-sci2016★ 22 cited
Hydrogen release at metal-oxide interfaces: A first principle study of hydrogenated Al/SiO interfaces
Jianqiu Huang, Eric Tea, Guanchen Li +1
The Anode Hydrogen Release (AHR) mechanism at interfaces is responsible for the generation of defects, that traps charge carriers and can induce dielectric breakdown in Metal-Oxide…