23 citations · 55 across the 6 of their papers we have counts for
3 papers · 1 filter
Evidence of valence band perturbations in GaAsN/GaAs(001): A combined variable-angle spectroscopic ellipsometry and modulated photoreflectance investigation
S. Turcotte, S. Larouche, J. -N. Beaudry +4
The contribution of the fundamental gap E_ as well as those of the E_ + Delta(so) and E+ transitions to the dielectric function of GaAs1-xNx alloys near the band edge were determin…
Magnetotransport in the insulating regime of Mn doped GaAs
Louis-Francois Arsenault, B. Movaghar, P. Desjardins +1
We consider transport in the insulating regime of GaMnAs. We calculate the resistance, magnetoresitance and Hall effect, assuming that the Fermi energy is in the region of localize…
Transport in the metallic regime of Mn doped III-V Semiconductors
Louis-Francois Arsenault, B. Movaghar, P. Desjardins +1
The standard model of Mn doping in GaAs is subjected to a coherent potential approximation (CPA) treatment. Transport coefficients are evaluated within the linear response Kubo for…