activity
20082015
most citedFano Resonances in Mid-Infrared Spectra of Single-Walled Carbon Nanotubes

23 citations · 55 across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.mtrl-sci2015★ 4 cited

Surface induced magnetization reversal of MnP nanoclusters embedded in GaP

Christian Lacroix, Samuel Lambert-Milot, Patrick Desjardins +2

We investigate the quasi-static magnetic behavior of ensembles of non-interacting ferromagnetic nanoparticles consisting of MnP nanoclusters embedded in GaP(001) epilayers grown at…

cond-mat.mes-hall2014

Phonon-Induced Transparency in Functionalized Single Layer Graphene

Bruno Rousseau, François Lapointe, Minh Nguyen +8

Herein, intervalley scattering is exploited to account for anomalous antiresonances in the infrared spectra of doped and disordered single layer graphene. We present infrared spect…

cond-mat.mtrl-sci2012★ 23 cited

Fano Resonances in Mid-Infrared Spectra of Single-Walled Carbon Nanotubes

François Lapointe, Étienne Gaufrés, Isabelle Tremblay +3

This work revisits the physics giving rise to the carbon nanotubes phonon bands in the mid- infrared. Our measurements of doped and undoped samples of single-walled carbon nanotube…

cond-mat.mtrl-sci2008★ 11 cited

Evidence of valence band perturbations in GaAsN/GaAs(001): A combined variable-angle spectroscopic ellipsometry and modulated photoreflectance investigation

S. Turcotte, S. Larouche, J. -N. Beaudry +4

The contribution of the fundamental gap E_ as well as those of the E_ + Delta(so) and E+ transitions to the dielectric function of GaAs1-xNx alloys near the band edge were determin…

cond-mat.mtrl-sci2008★ 12 cited

Magnetotransport in the insulating regime of Mn doped GaAs

Louis-Francois Arsenault, B. Movaghar, P. Desjardins +1

We consider transport in the insulating regime of GaMnAs. We calculate the resistance, magnetoresitance and Hall effect, assuming that the Fermi energy is in the region of localize…

cond-mat.mtrl-sci2008★ 5 cited

Transport in the metallic regime of Mn doped III-V Semiconductors

Louis-Francois Arsenault, B. Movaghar, P. Desjardins +1

The standard model of Mn doping in GaAs is subjected to a coherent potential approximation (CPA) treatment. Transport coefficients are evaluated within the linear response Kubo for…