activity
20082023
most citedObservation of Moiré Excitons in WSe2/WS2 Heterostructure Superlattices

1.2k citations · 8.9k across the 52 of their papers we have counts for

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7 papers · 1 filter

cond-mat.mtrl-sci2023★ 2 cited

Phason-mediated interlayer exciton diffusion in WS2/WSe2 moiré heterostructure

Antonio Rossi, Jonas Zipfel, Indrajit Maity +13

Moiré potentials in two-dimensional materials have been proven to be of fundamental importance to fully understand the electronic structure of van der Waals heterostructures, from…

cond-mat.mtrl-sci2021★ 3 cited

Tuning color centers at a twisted interface

Cong Su, Fang Zhang, Salman Kahn +15

Color center is a promising platform for quantum technologies, but their application is hindered by the typically random defect distribution and complex mesoscopic environment. Emp…

cond-mat.mtrl-sci2018★ 3 cited

Exploring interlayer Dirac cone coupling in commensurately rotated few-layer graphene on SiC(000-1)

C. Mathieu, E. H. Conrad, F. Wang +5

We investigate electronic band-structure images in reciprocal space of few layer graphene epitaxially grown on SiC(000-1). In addition to the observation of commensurate rotation a…

cond-mat.mtrl-sci2017★ 167 cited

Strain-modulated Bandgap and Piezo-resistive Effect in Black Phosphorus Field-effect Transistors

Zuocheng Zhang, Likai Li, Jason Horng +10

Energy bandgap largely determines the optical and electronic properties of a semiconductor. Variable bandgap therefore makes versatile functionality possible in a single material.…

cond-mat.mtrl-sci2016★ 21 cited

Observation of Ultralong Valley Lifetime in WSe2/MoS2 Heterostructures

Jonghwan Kim, Chenhao Jin, Bin Chen +9

The valley degree of freedom in two-dimensional (2D) crystals recently emerged as a novel information carrier in addition to spin and charge. The intrinsic valley lifetime in 2D tr…

cond-mat.mtrl-sci2015★ 202 cited

Direct growth of single- and few-layer MoS2 on h-BN with preferred relative rotation angles

Aiming Yan, Jairo Velasco, Salman Kahn +5

Monolayer molybdenum disulphide (MoS2) is a promising two-dimensional direct-bandgap semiconductor with potential applications in atomically thin and flexible electronics. An attra…