3 papers
quant-ph2026
Efficient formation and identification of single emitters in 4H-SiC following maskless heavy ion implantation
S. Eserin, L. K. S. Zimmermann, E. Schneider +12
Single photon emitters in silicon carbide (SiC) are a leading platform for scalable quantum technologies. Recent interest has focused on oxygen-vacancy-related emitters, which show…
cond-mat.mtrl-sci2024
Photoluminescence of Femtosecond Laser-irradiated Silicon Carbide
Y. Abdedou, A. Fuchs, P. Fuchs +8
Silicon carbide (SiC) is the leading wide-bandgap semiconductor material, providing mature doping and device fabrication. Additionally, SiC hosts a multitude of optically active po…
quant-ph2023
Spectral stability of V2 centres in sub-micron 4H-SiC membranes
Jonah Heiler, Jonathan Körber, Erik Hesselmeier +9
Colour centres in silicon carbide emerge as a promising semiconductor quantum technology platform with excellent spin-optical coherences.However, recent efforts towards maximising…