18 citations · 18 across the 3 of their papers we have counts for
4 papers
Scalable integration of silicon carbide color centers into nanophotonic structures
Raphael Wörnle, Jonas Schmid, Dennis Grüner +7
Color centers in silicon carbide are a promising platform for quantum technologies, offering long-coherence electron and nuclear spins for storing and manipulating quantum informat…
Efficient formation and identification of single emitters in 4H-SiC following maskless heavy ion implantation
S. Eserin, L. K. S. Zimmermann, E. Schneider +12
Single photon emitters in silicon carbide (SiC) are a leading platform for scalable quantum technologies. Recent interest has focused on oxygen-vacancy-related emitters, which show…
Photoluminescence of Femtosecond Laser-irradiated Silicon Carbide
Y. Abdedou, A. Fuchs, P. Fuchs +8
Silicon carbide (SiC) is the leading wide-bandgap semiconductor material, providing mature doping and device fabrication. Additionally, SiC hosts a multitude of optically active po…
Spectral stability of V2 centres in sub-micron 4H-SiC membranes
Jonah Heiler, Jonathan Körber, Erik Hesselmeier +9
Colour centres in silicon carbide emerge as a promising semiconductor quantum technology platform with excellent spin-optical coherences.However, recent efforts towards maximising…