156 citations · 190 across the 4 of their papers we have counts for
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cond-mat.mtrl-sci2020★ 7 cited
Fabrication of Germanium-on-insulator in a Ge wafer with a crystalline Ge top layer and buried GeO2 layer by Oxygen ion implantation
Vishal Kumar Aggarwal, Ankita Ghatak, Dinakar Kanjilal +6
The paper reports fabrication of Germanium-on-Insulator (GeOI) wafer by Oxygen ion implantation of an undoped single crystalline Ge wafer of orientation (100). Oxygen ions of energ…
cond-mat.mtrl-sci2011★ 4 cited
Voltage bias induced modification of all oxide Pr0.5Ca0.5MnO3/SrTi0.95Nb.05O3 junctions
Barnali Ghosh, K. Das, A. K. Raychaudhuri
In this paper we report what happens to a pristine oxide junction Pr0.5Ca0.5MnO3/SrTi0.95Nb.05O3 (PCMO/Nb:STO), when it is subjected to cycling of voltage bias of moderate value ({…