most citedThe sign of electron g-factor in GaAs(1-x)N(x) measured by using the Hanle effect

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cond-mat.mtrl-sci2005

Spin-dependent recombination in GaAsN alloys

V. K. Kalevich, E. L. Ivchenko, M. M. Afanasiev +5

The spin-dependent recombination (SDR) has been observed in GaAs_{1-x}N_{x} (x = 2.1, 2.7, 3.4%) at room temperature. It reveals itself in a decrease of the edge photoluminescence…