112 citations · 142 across the 14 of their papers we have counts for
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Accurate prediction of optical transitions in epitaxial InGaAs/InAlAs asymmetric coupled quantum well structures
Konstantinos Pantzas, Virginie Trinité, Angel Vasanelli +5
Atomically-resolved Z-contrast and strain mappings are used to extract a model of the composition of an InGaAs/InAlAs asymmetric coupled quantum-well structure grown on InP using m…
Relaxation mechanism of GaP grown on 001 Sisubstrates: influence of defects on the growth of AlGaPlayers on GaP/Si templates
Konstantinos Pantzas, Grégoire Beaudoin, Myriam Bailly +7
The mechanical stability of commercial GaP/Si templates during thermal an-nealing and subsequent MOCVD growth of GaP and AlGaP is investigated.Although the GaP layer of the templat…
Time-Resolved characterization of InAsP/InP quantum dots emitting in the C-band telecommunication window
Richard Hostein, Adrien Michon, Gregoire Beaudoin +6
The dynamic response of InAsP quantum dots grown on InP(001) substrates by low-pressure Metalorganic Vapor Phase Epitaxy emitting around 1.55 m, is investigated by means of time…