Al${}_{5+\alpha }$Si${}_{5+\delta }$N${}_{12}$, a new Nitride compound

R. Dagher, L. Lymperakis, V. Delaye +4

We report on the synthesis of new nitride-based compound by using annealing of AlN heteroepitaxial layers under a Si-atmosphere at temperatures between 1350${}^{\circ }$C and 1550$^\cir…