18 citations · 20 across the 5 of their papers we have counts for
4 papers · 1 filter
Hydrogen-mediated CVD epitaxy of Graphene on SiC: growth mechanism and atomic configuration
Zouhour Ben Jabra, Isabelle Berbezier, Adrien Michon +7
Despite the large literature focused on the growth of graphene (Gr) on 6H-SiC(0001) by chemical vapour deposition (CVD), some important issues have not been solved and full wafer s…
Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor deposition
F. Giannazzo, R. Dagher, E. Schilirò +8
The integration of graphene (Gr) with nitride semiconductors is highly interesting for applications in high-power/high-frequency electronics and optoelectronics. In this work, we d…
AlSiN, a new Nitride compound
R. Dagher, L. Lymperakis, V. Delaye +4
We report on the synthesis of new nitride-based compound by using annealing of AlN heteroepitaxial layers under a Si-atmosphere at temperatures between 1350C and 1550$^\cir…
Time-Resolved characterization of InAsP/InP quantum dots emitting in the C-band telecommunication window
Richard Hostein, Adrien Michon, Gregoire Beaudoin +6
The dynamic response of InAsP quantum dots grown on InP(001) substrates by low-pressure Metalorganic Vapor Phase Epitaxy emitting around 1.55 m, is investigated by means of time…