486 citations · 3.7k across the 32 of their papers we have counts for
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Observation of ultrafast interfacial Meitner-Auger energy transfer in a van der Waals heterostructure
Shuo Dong, Samuel Beaulieu, Malte Selig +23
Atomically thin layered van der Waals heterostructures feature exotic and emergent optoelectronic properties. With growing interest in these novel quantum materials, the microscopi…
Observation of a possible diluted ferromagnetism above room temperature in cobalt-substituted LaTa(O,N)3-d
Cora Bubeck, Eberhard Goering, Robert Lawitzki +11
Since 2000, the intensive effort in materials research to develop a diluted magnetic semiconductor exhibiting high-temperature (HT) ferromagnetism above room temperature was not su…
Semiconductor to metal transition in two-dimensional gold and its van der Waals heterostack with graphene
Stiven Forti, Stefan Link, Alexander Stöhr +4
The synthesis of transition metals in a two-dimensional (2D) fashion has attracted growing attention for both fundamental and application-oriented investigations, such as 2D magnet…
Room temperature strain-induced Landau levels in graphene on a wafer-scale platform
P. Nigge, A. C. Qu, É. Lantagne-Hurtubise +14
Graphene is a powerful playground for studying a plethora of quantum phenomena. One of the remarkable properties of graphene arises when it is strained in particular geometries and…
Enhanced electron-phonon coupling in graphene with periodically distorted lattice
E. Pomarico, M. Mitrano, H. Bromberger +11
Electron-phonon coupling directly determines the stability of cooperative order in solids, including superconductivity, charge and spin density waves. Therefore, the ability to enh…
Controlling the Electrical Properties of Undoped and Ta-doped TiO2 Polycrystalline Films via Ultra-Fast Annealing Treatments
Piero Mazzolini, Tolga Acartürk, Daniel Chrastina +4
We present a study on the crystallization process of undoped and Ta doped TiO2 amorphous thin films. In particular, the effect of ultra-fast annealing treatments in environments ch…
Tracking primary thermalization events in graphene with photoemission at extreme timescales
I. Gierz, F. Calegari, S. Aeschlimann +7
Direct and inverse Auger scattering are amongst the primary processes that mediate the thermalization of hot carriers in semiconductors. These two processes involve the annihilatio…
Approaching ideal graphene: The structure of hydrogen-intercalated graphene on 6H-SiC(0001)
J. Sforzini, L. Nemec, T. Denig +9
We measure the adsorption height of hydrogen-intercalated quasi-free-standing monolayer graphene on the (0001) face of 6H silicon carbide by the normal incidence x-ray standing wav…
Population Inversion in Monolayer and Bilayer Graphene
Isabella Gierz, Matteo Mitrano, Jesse C. Petersen +7
The recent demonstration of saturable absorption and negative optical conductivity in the Terahertz range in graphene has opened up new opportunities for optoelectronic application…
Revealing the electronic band structure of trilayer graphene on SiC: An angle-resolved photoemission study
Camilla Coletti, Stiven Forti, Alessandro Principi +10
In recent times, trilayer graphene has attracted wide attention owing to its stacking and electric field dependent electronic properties. However, a direct and well-resolved experi…
Large area quasi-free standing monolayer graphene on 3C-SiC(111)
Camilla Coletti, Konstantin V. Emtsev, Alexei A. Zakharov +3
Large scale, homogeneous quasi-free standing monolayer graphene is obtained on cubic silicon carbide, i.e. the 3C-SiC(111) surface, which represents an appealing and cost effective…
Charged defects in graphene and the ionicity of hexagonal boron nitride in direct images
Jannik C. Meyer, Simon Kurasch, Hye Jin Park +10
We report on the detection and charge distribution analysis for nitrogen substitutional dopants in single layer graphene membranes by aberration-corrected high-resolution transmiss…
Electronic decoupling of an epitaxial graphene monolayer by gold intercalation
Isabella Gierz, Takayuki Suzuki, Dong Su Lee +7
The application of graphene in electronic devices requires large scale epitaxial growth. The presence of the substrate, however, usually reduces the charge carrier mobility conside…
Band structure engineering of epitaxial graphene on SiC by molecular doping
Camilla Coletti, Christian Riedl, Dong Su Lee +5
Epitaxial graphene on SiC(0001) suffers from strong intrinsic n-type doping. We demonstrate that the excess negative charge can be fully compensated by non-covalently functionalizi…
Atomic Hole Doping of Graphene
Isabella Gierz, Christian Riedl, Ulrich Starke +2
Graphene is an excellent candidate for the next generation of electronic materials due to the strict two-dimensionality of its electronic structure as well as the extremely high ca…
Raman spectra of epitaxial graphene on SiC and of epitaxial graphene transferred to SiO2
Dong Su Lee, Christian Riedl, Benjamin Krauß +3
Raman spectra were measured for mono-, bi- and trilayer graphene grown on SiC by solid state graphitization, whereby the number of layers was pre-assigned by angle-resolved ultravi…
LEED Holography applied to a complex superstructure: a direct view of the adatom cluster on SiC(111)-(3x3)
K. Reuter, J. Schardt, J. Bernhardt +3
For the example of the SiC(111)-(3x3) reconstruction we show that a holographic interpretation of discrete Low Energy Electron Diffraction (LEED) spot intensities arising from orde…