257 citations · 692 across the 18 of their papers we have counts for
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Depth Control of Room-Temperature Quantum Emitters in Gallium Nitride
Alexandros Bampis, Johann Stachurski, Anna Schwab +3
Bright quantum emitters are key components for quantum communication systems. Radiative point defects in gallium nitride (GaN) are promising candidates for room-temperature single-…
Excitonic interplay between surface polar III-nitride quantum wells and MoS monolayer
Danxuan Chen, Jin Jiang, Thomas F. K. Weatherley +3
III-nitride wide bandgap semiconductors exhibit large exciton binding energies, preserving strong excitonic effects at room temperature. On the other hand, semiconducting two-dimen…
Propagating Polaritons in III-Nitride Slab Waveguides
Joachim Ciers, Jonas G. Roch, Jean-François Carlin +3
We report on III-nitride waveguides with c-plane GaN/AlGaN quantum wells in the strong light-matter coupling regime supporting propagating polaritons. They feature a normal mode sp…
On thresholdless lasing features in high- nitride nanobeam cavities: a quantum optical study
Stefan T. Jagsch, Noelia Vico Triviño, Frederik Lohof +11
Exploring the limits of spontaneous emission coupling is not only one of the central goals in the development of nanolasers, it is also highly relevant regarding future large-scale…
Cavity-enhanced optical Hall effect in two-dimensional free charge carrier gases detected at terahertz frequencies
S. Knight, S. Schöche, V. Darakchieva +6
The effect of a tunable, externally coupled Fabry-Pérot cavity to resonantly enhance the optical Hall effect signatures at terahertz frequencies produced by a traditional Drude-lik…
Large K-exciton dynamics in GaN epilayers: the non-thermal and thermal regime
A. Vinattieri, F. Bogani, L. Cavigli +7
We present a detailed investigation concerning the exciton dynamics in GaN epilayers grown on c-plane sapphire substrates, focussing on the exciton formation and the transition fro…