231 citations · 1.5k across the 55 of their papers we have counts for
8 papers · 1 filter
The effect of (NH4)2Sx passivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices
D. J. Carrad, A. M. Burke, P. J. Reece +6
We have studied the efficacy of (NH4)2Sx surface passivation on the (311)A GaAs surface. We report XPS studies of simultaneously-grown (311)A and (100) heterostructures showing tha…
Fifth-order nonlinear optical response of excitonic states in an InAs quantum dot ensemble measured with 2D spectroscopy
G. Moody, R. Singh, H. Li +5
Exciton, trion and biexciton dephasing rates are measured within the inhomogeneous distribution of an InAs quantum dot (QD) ensemble using two-dimensional Fourier-transform spectro…
Split-gate quantum point contacts with tunable channel length
M. J. Iqbal, J. P. de. Jong, D. Reuter +2
We report on developing split-gate quantum point contacts (QPCs) that have a tunable length for the transport channel. The QPCs were realized in a GaAs/AlGaAs heterostructure with…
The origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures
A. M. Burke, D. Waddington, D. Carrad +9
Gate instability/hysteresis in modulation-doped p-type AlGaAs/GaAs heterostructures impedes the development of nanoscale hole devices, which are of interest for topics from quantum…
Single exciton emission from gate-defined quantum dots
G. J. Schinner, J. Repp, E. Schubert +6
With gate-defined electrostatic traps fabricated on a double quantum well we are able to realize an optically active and voltage-tunable quantum dot confining individual, long-livi…
Fabrication and characterisation of ambipolar devices on an undoped AlGaAs/GaAs heterostructure
J. C. H. Chen, D. Q. Wang, O. Klochan +7
We have fabricated AlGaAs/GaAs heterostructure devices in which the conduction channel can be populated with either electrons or holes simply by changing the polarity of a gate bia…