activity
20082026
most citedElectrical detection of the spin polarization due to charge flow in the surface state of the topological insulator Bi_1.5 Sb_0.5 Te_1.7 Se_1.3

164 citations · 1.9k across the 59 of their papers we have counts for

collaborators
Showing 2016Show all

5 papers · 1 filter

cond-mat.mes-hall2016★ 72 cited

Switching of Charge-Current-Induced Spin Polarization in the Topological Insulator BiSbTeSe2

Fan Yang, Subhamoy Ghatak, A. A. Taskin +7

The charge-current-induced spin polarization is a key property of topological insulators for their applications in spintronics. However, topological surface states are expected to…

cond-mat.mtrl-sci2016★ 91 cited

Gate-tunable spin-charge conversion and a role of spin-orbit interaction in graphene

S. Dushenko, H. Ago, K. Kawahara +6

The small spin-orbit interaction of carbon atoms in graphene promises a long spin diffusion length and potential to create a spin field-effect transistor. However, for this reason,…

cond-mat.mtrl-sci2016★ 48 cited

Transport and spin conversion of multi-carriers in semimetal bismuth

Hiroyuki Emoto, Yuichiro Ando, Gaku Eguchi +5

In this paper, we report on the investigation of (1) the transport properties of multi-carriers in semi-metal Bi and (2) the spin conversion physics in this semimetal system in a f…

cond-mat.mtrl-sci2016★ 34 cited

Observation of large spin accumulation voltages in non-degenerate Si spin devices due to spin drift effect: Experiments and theory

Takayuki Tahara, Yuichiro Ando, Makoto Kameno +7

A large spin-accumulation voltage of more than 1.5 mV at 1 mA, i.e., a magnetoresistance of 1.5 Ω, was measured by means of the local three-terminal magnetoresistance in nondegener…

cond-mat.mtrl-sci2016★ 62 cited

Strong evidence for d-electron spin transport at room temperature at a LaAlO3/SrTiO3 interface

Ryo Ohshima, Yuichiro Ando, Kosuke Matsuzaki +8

A d-orbital electron has an anisotropic electron orbital and is a source of magnetism. The realization of a 2-dimensional electron gas (2DEG) embedded at a LaAlO3/SrTiO3 interface…