164 citations · 1.9k across the 59 of their papers we have counts for
6 papers · 2 filters
Electrical detection of the spin polarization due to charge flow in the surface state of the topological insulator Bi_1.5 Sb_0.5 Te_1.7 Se_1.3
Yuichiro Ando, Takahiro Hamasaki, Takayuki Kurokawa +7
We detected the spin polarization due to charge flow in the spin non-degenerate surface state of a three dimensional topological insulator by means of an all-electrical method. The…
Spin transport in non-degenerate Si with a spin MOSFET structure at room temperature
Tomoyuki Sasaki, Yuichiro Ando, Makoto Kameno +5
Spin transport in non-degenerate semiconductors is expected to pave a way to the creation of spin transistors, spin logic devices and reconfigurable logic circuits, because room te…
Observation of spin-charge conversion in CVD-grown single-layer graphene
Ryo Ohshima, Atsushi Sakai, Yuichiro Ando +4
Conversion of pure spin current to charge current in single-layer graphene (SLG) is investigated by using spin pumping. Large-area SLG grown by chemical vapor deposition is used fo…
Exchange-driven magnetoresistance in silicon facilitated by electrical spin injection
Yuichiro Ando, Lan Qing, Yang Song +6
We use electrical spin injection to probe exchange interactions in phosphorus doped silicon (Si:P). The detection is enabled by a magnetoresistance effect that demonstrates the eff…
Spin Drift in Highly Doped n-type Si
Makoto Kameno, Yuichiro Ando, Teruya Shinjo +5
A quantitative estimation of spin drift velocity in highly doped n-type silicon (Si) at 8 K is presented in this letter. A local two-terminal Hanle measurement enables the detectio…
Local magnetoresistance in Fe/MgO/Si lateral spin valve at room temperature
Tomoyuki Sasaki, Toshio Suzuki, Yuichiro Ando +4
Room temperature local magnetoresistance in two-terminal scheme is reported. By employing 1.6 nm-thick MgO tunnel barrier, spin injection efficiency is increased, resulting in larg…