164 citations · 1.9k across the 59 of their papers we have counts for
Showing 2011 · cond-mat.mtrl-sciShow all
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cond-mat.mtrl-sci2011★ 33 cited
The effect of spin drift on spin accumulation voltages in highly-doped Si
Makoto Kameno, Eiji Shikoh, Teruya Shinjo +5
An investigation was carried out into the effect of spin drift on spin accumulation signals in highly-doped Si using non-local 4-terminal (NL-4T) and 3-terminal (NL-3T) methods. Th…
cond-mat.mtrl-sci2011★ 71 cited
Spin accumulation created electrically in an n-type germanium channel using Schottky tunnel contacts
K. Kasahara, Y. Baba, K. Yamane +6
Using high-quality FeSi/-Ge Schottky-tunnel-barrier contacts, we study spin accumulation in an -type germanium (-Ge) channel. In the three- or two-terminal volta…
cond-mat.mtrl-sci2011★ 50 cited
Bias current dependence of spin accumulation signals in a silicon channel detected by a Schottky tunnel contact
Y. Ando, K. Kasahara, K. Yamane +6
We study the electrical detection of spin accumulation at a ferromagnet-silicon interface, which can be verified by measuring a Hanle effect in three-terminal lateral devices. The…