most citedHigh-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides (Supplementary Information)

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cond-mat.mes-hall2008★ 221 cited

High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides (Supplementary Information)

X. Hong, A. Posadas, K. Zou +2

Supplementary Information to arXiv:0810.4466: 1. Characterizations of Pb(Zr_0.2Ti_0.8)O_3 (PZT) films. 2. Substrate preparation before the exfoliation of graphene. 3. The band stru…

cond-mat.mes-hall2008★ 221 cited

High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides

X. Hong, A. Posadas, K. Zou +2

The carrier mobility μof few-layer graphene (FLG) field-effect transistors increases ten-fold when the SiO_2 substrate is replaced by single-crystal epitaxial Pb(Zr_0.2Ti_0.8)O_3 (…