221 citations · 498 across the 3 of their papers we have counts for
3 papers
cond-mat.mes-hall2008★ 221 cited
High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides (Supplementary Information)
X. Hong, A. Posadas, K. Zou +2
Supplementary Information to arXiv:0810.4466: 1. Characterizations of Pb(Zr_0.2Ti_0.8)O_3 (PZT) films. 2. Substrate preparation before the exfoliation of graphene. 3. The band stru…
cond-mat.mes-hall2008★ 221 cited
High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides
X. Hong, A. Posadas, K. Zou +2
The carrier mobility μof few-layer graphene (FLG) field-effect transistors increases ten-fold when the SiO_2 substrate is replaced by single-crystal epitaxial Pb(Zr_0.2Ti_0.8)O_3 (…
cond-mat.mtrl-sci2006★ 56 cited
Monodomain to polydomain transition in ferroelectric PbTiO3 thin films with La0.67Sr0.3MnO3 electrodes
Celine Lichtensteiger, Matthew Dawber, Nicolas Stucki +6
Finite size effects in ferroelectric thin films have been probed in a series of epitaxial perovskite c-axis oriented PbTiO3 films grown on thin La0.67Sr0.33MnO3 epitaxial electrode…