activity
20082022
most citedHigh-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides (Supplementary Information)

221 citations · 1.1k across the 11 of their papers we have counts for

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Showing 2010Show all

2 papers · 1 filter

cond-mat.mes-hall2010★ 118 cited

Unusual Resistance Hysteresis in n-Layer Graphene Field Effect Transistors Fabricated on Ferroelectric Pb(Zr_0.2Ti_0.8)O_3

X. Hong, J. Hoffman, A. Posadas +3

We have fabricated n-layer graphene field effect transistors on epitaxial ferroelectric Pb(Zr_0.2Ti_0.8)O_3 (PZT) thin films. At low gate voltages, PZT behaves as a high-k dielectr…

cond-mat.mes-hall2010★ 87 cited

Mechanism for current saturation and energy dissipation in graphene transistors

Ashley M. DaSilva, Ke Zou, J. K. Jain +1

From a combination of careful and detailed theoretical and experimental studies, we demonstrate that the Boltzmann theory including all scattering mechanisms gives an excellent acc…