activity
20082022
most citedHigh-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides (Supplementary Information)

221 citations · 1.1k across the 11 of their papers we have counts for

collaborators

11 papers

cond-mat.mtrl-sci2022★ 2 cited

Realistic simulation of reflection high-energy electron diffraction patterns for two-dimensional lattices using Ewald construction

Chong Liu, Kai Chang, Ke Zou

Reflection high-energy electron diffraction (RHEED) is a powerful tool for characterizing crystal surface structures. However, the setup geometry leads to distorted and complicated…

cond-mat.str-el2018★ 3 cited

Topological bosonic states on ribbons of honeycomb lattice

Yiping Wang, Xingchuan Zhu, Kefei Zou +2

The topological properties of hardcore bosons on ribbons of honeycomb lattice are studied using quantum Monte Carlo simulations. We map out a rich phase diagram with the superfluid…

cond-mat.mes-hall2016★ 30 cited

Effective Mass in Bilayer Graphene at Low Carrier Densities: the Role of Potential Disorder and Electron-Electron Interaction

J. Li, L. Z. Tan, K. Zou +6

In a two-dimensional electron gas, the electron-electron interaction generally becomes stronger at lower carrier densities and renormalizes the Fermi liquid parameters such as the…

cond-mat.str-el2011

Electron-electron interaction and electron-hole asymmetry in bilayer graphene (Supporting Materials)

K. Zou, X. Hong, J. Zhu

We report precision measurements of the effective mass m* in high-quality bilayer graphene using the temperature dependence of the Shubnikov-de Haas oscillations. In the density ra…

cond-mat.str-el2011★ 143 cited

Electron-electron interaction and electron-hole asymmetry in bilayer graphene

K. Zou, X. Hong, J. Zhu

We report precision measurements of the effective mass m* in high-quality bilayer graphene using the temperature dependence of the Shubnikov-de Haas oscillations. In the density ra…

cond-mat.mes-hall2010★ 118 cited

Unusual Resistance Hysteresis in n-Layer Graphene Field Effect Transistors Fabricated on Ferroelectric Pb(Zr_0.2Ti_0.8)O_3

X. Hong, J. Hoffman, A. Posadas +3

We have fabricated n-layer graphene field effect transistors on epitaxial ferroelectric Pb(Zr_0.2Ti_0.8)O_3 (PZT) thin films. At low gate voltages, PZT behaves as a high-k dielectr…