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20082014
most citedThe Observation of Percolation-Induced 2D Metal-Insulator Transition in a Si MOSFET

113 citations · 114 across the 3 of their papers we have counts for

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Showing 2014Show all

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cond-mat.mes-hall2014

Probing limits of STM field emission patterned Si:P -doped devices

M. Rudolph, S. M. Carr, G. Subramania +6

Recently, a single atom transistor was deterministically fabricated using phosphorus in Si by H-desorption lithography with a scanning tunneling microscope (STM). This milestone in…