113 citations · 114 across the 3 of their papers we have counts for
3 papers
cond-mat.mes-hall2014
Probing limits of STM field emission patterned Si:P -doped devices
M. Rudolph, S. M. Carr, G. Subramania +6
Recently, a single atom transistor was deterministically fabricated using phosphorus in Si by H-desorption lithography with a scanning tunneling microscope (STM). This milestone in…
cond-mat.mes-hall2011★ 1 cited
Triangulating tunneling resonances in a point contact
Nathaniel C. Bishop, Ralph W. Young, Gregory A. Ten Eyck +8
We observe resonant tunneling in silicon split gate point contacts implanted with antimony and defined in a self-aligned poly-silicon double gate enhancement mode Si-MOS device str…
cond-mat.mes-hall2008★ 113 cited
The Observation of Percolation-Induced 2D Metal-Insulator Transition in a Si MOSFET
L. A. Tracy, E. H. Hwang, K. Eng +6
By analyzing the temperature () and density () dependence of the measured conductivity () of 2D electrons in the low density (cm) and temperature (0.02…