activity
20022023
most citedEnhancement of spontaneous emission in a quantum well by resonant surface plasmon coupling

386 citations · 449 across the 14 of their papers we have counts for

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Showing cond-mat.mtrl-sciShow all

7 papers · 1 filter

cond-mat.mtrl-sci2020★ 6 cited

Analyzing Growth Kinematics and Fractal Dimensions of Molybdenum Disulfide Films

Yan Jiang, Moritz to Baben, Yuankun Lin +4

Through the positive role of alkali halides in realizing large area growth of transition metal-di-chalcogenide layers has been validated, the film-growth kinematics has not yet bee…

cond-mat.mtrl-sci2020★ 3 cited

Long-term Stability of Bilayer MoS2 in Ambient Air

John Femi-Oyetoro, Kevin Yao, Evan Hathaway +9

We report that chemical vapor deposition (CVD) grown bilayer and thicker-layered MoS2 are structurally and optically stable under ambient conditions, in comparison to CVD-grown mon…

cond-mat.mtrl-sci2019

Absorption and emission modulation in MoS2-GaN (0001) heterostructure by interface phonon-exciton coupling

Yuba Poudel, Jagoda Slawinska, Priya Gopal +6

Semiconductor heterostructures based on layered two-dimensional transition metal dichalcogenides (TMD) interfaced to gallium nitride (GaN) are excellent material systems to realize…

cond-mat.mtrl-sci2011

Coherent Control of Acoustic Phonons in hybrid Metal-Semiconductor System

Meg Mahat, Sergio Periera, Ian M. Watson +2

We demonstrate the modification of coherent zone-folded longitudinal acoustic phonons (ZFLAPs) oscillations in InGaN/GaN multiple quantum wells by the inclusion of metal nanopartic…

cond-mat.mtrl-sci2008

Enhanced UV Light emission from Silicon nanoparticles induced by Au ion implantation

Akhilesh Singh, Karol G. Grycznski, Bibhu Rout +5

Study of light emitting silicon fabricated by ion implantation.

cond-mat.mtrl-sci2004★ 25 cited

Coupling of spontaneous emission from GaN/AlN quantum dots into silver surface plasmons

Arup Neogi, Hadis Morkoc, Takamasa Kuroda +1

We have demonstrated surface-plasmon induced change in spontaneous emission rate in the ultraviolet regime at ~ 375-380 nm, using AlN/GaN quantum dots (QD). Using time-resolved and…

cond-mat.mtrl-sci2002★ 386 cited

Enhancement of spontaneous emission in a quantum well by resonant surface plasmon coupling

Arup Neogi, Chang-Won Lee, Henry O. Everitt +3

Using time-resolved photoluminescence measurements, the recombination rate in an InGaN/GaN quantum well (QW) is shown to be greatly enhanced when spontaneous emis…