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Gate-tunable carbon nanotube-MoS2 heterojunction p-n diode
Deep Jariwala, Vinod K. Sangwan, Chung-Chiang Wu +5
The p-n junction diode and field-effect transistor (FET) are the two most ubiquitous building blocks of modern electronics and optoelectronics. In recent years, the emergence of re…
Optimization of graphene dry etching conditions via combined microscopic and spectroscopic analysis
Mariana C. Prado, Deep Jariwala, Tobin J. Marks +1
Single-layer graphene structures and devices are commonly defined using reactive ion etching and plasma etching with O2 or Ar as the gaseous etchants. Although optical microscopy a…
Quantitatively Enhanced Reliability and Uniformity of High-κ Dielectrics on Graphene Enabled by Self-Assembled Seeding Layers
Vinod K. Sangwan, Deep Jariwala, Stephen A. Filippone +6
The full potential of graphene in integrated circuits can only be realized with a reliable ultra-thin high-κ top-gate dielectric. Here, we report the first statistical analysis of…