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Graphene on a hydrophobic substrate: Doping reduction and hysteresis suppression under ambient conditions
Myrsini Lafkioti, Benjamin Krauss, Timm Lohmann +4
The intrinsic doping level of graphene prepared by mechanical exfoliation and standard lithography procedures on thermally oxidized silicon varies significantly and seems to depend…
The nature of localization in graphene under quantum Hall conditions
J. Martin, N. Akerman, G. Ulbricht +4
Particle localization is an essential ingredient in quantum Hall physics [1,2]. In conventional high mobility two-dimensional electron systems Coulomb interactions were shown to co…
Four-terminal magneto-transport in graphene p-n junctions created by spatially selective doping
Timm Lohmann, Klaus v. Klitzing, Jurgen H. Smet
In this paper we describe a graphene p-n junction created by chemical doping. We find that chemical doping does not reduce mobility in contrast to top-gating. The preparation techn…
Observation of Electron-Hole Puddles in Graphene Using a Scanning Single Electron Transistor
J. Martin, N. Akerman, G. Ulbricht +4
The electronic density of states of graphene is equivalent to that of relativistic electrons. In the absence of disorder or external doping the Fermi energy lies at the Dirac point…