activity
20072009
most citedObservation of Electron-Hole Puddles in Graphene Using a Scanning Single Electron Transistor

1.6k citations · 2.6k across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mes-hall2009★ 428 cited

Graphene on a hydrophobic substrate: Doping reduction and hysteresis suppression under ambient conditions

Myrsini Lafkioti, Benjamin Krauss, Timm Lohmann +4

The intrinsic doping level of graphene prepared by mechanical exfoliation and standard lithography procedures on thermally oxidized silicon varies significantly and seems to depend…

cond-mat.mes-hall2009★ 75 cited

The nature of localization in graphene under quantum Hall conditions

J. Martin, N. Akerman, G. Ulbricht +4

Particle localization is an essential ingredient in quantum Hall physics [1,2]. In conventional high mobility two-dimensional electron systems Coulomb interactions were shown to co…

cond-mat.mes-hall2009★ 288 cited

Four-terminal magneto-transport in graphene p-n junctions created by spatially selective doping

Timm Lohmann, Klaus v. Klitzing, Jurgen H. Smet

In this paper we describe a graphene p-n junction created by chemical doping. We find that chemical doping does not reduce mobility in contrast to top-gating. The preparation techn…

cond-mat.mtrl-sci2008★ 224 cited

Laser-induced disassembly of a graphene single crystal into a nano-crystalline network

Benjamin Krauss, Timm Lohmann, Dong-Hun Chae +3

We report about investigations of time-dependent structural modifications in single crystal graphene due to laser irradiation even at moderate power levels of 1mW in a diffraction…

cond-mat.mes-hall2007★ 1.6k cited

Observation of Electron-Hole Puddles in Graphene Using a Scanning Single Electron Transistor

J. Martin, N. Akerman, G. Ulbricht +4

The electronic density of states of graphene is equivalent to that of relativistic electrons. In the absence of disorder or external doping the Fermi energy lies at the Dirac point…