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researcher

P. Dłużewski

3 papers hereh-index 261.9k citations138 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • middle author3

Across the 3 of 3 papers where every author was matched, so the position is known.

fields
  • cond-mat.mtrl-sci3
same name
  • P. Dłużewski — 4 papers, h 8
  • P. Dłużewski — 2 papers
  • P. Dłużewski — 1 paper

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

activity
20082021
most citedImproved-Sensitivity Integral SQUID Magnetometry of (Ga,Mn)N Thin Films in Proximity to Mg-doped GaN

18 citations · 18 across the 2 of their papers we have counts for

collaborators
Showing cond-mat.mtrl-sciShow all

3 papers · 1 filter

cond-mat.mtrl-sci2021★ 18 cited

Improved-Sensitivity Integral SQUID Magnetometry of (Ga,Mn)N Thin Films in Proximity to Mg-doped GaN

Katarzyna Gas, Gerd Kunert, Piotr Dluzewski +3

Nominally 45 nm GaN:Mg/ 5 nm (Ga,Mn)N / 45 nm GaN:Mg trilayers structures prepared by molecular beam epitaxy on GaN-buffered Al2O3 substrates are investigated to verify whether the…

cond-mat.mtrl-sci2018

Impact of substrate temperature on magnetic properties of plasma-assisted molecular beam epitaxy grown (Ga,Mn)N

Katarzyna Gas, Jaroslaw Z. Domagala, Rafal Jakiela +12

A range of high quality Ga1-xMnxN layers have been grown by molecular beam epitaxy with manganese concentration 0.2 < x < 10%, having the x value tuned by changing the growth tempe…

cond-mat.mtrl-sci2008

Autocatalytic MBE growth of GaAs nanowires on oxidized Si(100)

Janusz Sadowski, Piotr Dluzewski, Janusz Kanski

GaAs nanowires were grown by molecular beam epitaxy on Si(100) substrates covered with 5 nm SiO2. The growth was performed with As4 at low, close to stoichiometric, As4/Ga flux rat…

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