53 citations · 115 across the 6 of their papers we have counts for
6 papers
Improved-Sensitivity Integral SQUID Magnetometry of (Ga,Mn)N Thin Films in Proximity to Mg-doped GaN
Katarzyna Gas, Gerd Kunert, Piotr Dluzewski +3
Nominally 45 nm GaN:Mg/ 5 nm (Ga,Mn)N / 45 nm GaN:Mg trilayers structures prepared by molecular beam epitaxy on GaN-buffered Al2O3 substrates are investigated to verify whether the…
Impact of substrate temperature on magnetic properties of plasma-assisted molecular beam epitaxy grown (Ga,Mn)N
Katarzyna Gas, Jaroslaw Z. Domagala, Rafal Jakiela +12
A range of high quality Ga1-xMnxN layers have been grown by molecular beam epitaxy with manganese concentration 0.2 < x < 10%, having the x value tuned by changing the growth tempe…
Magnetic anisotropy of La0.7Sr0.3MnO3 nanopowders
I. Radelytskyi, P. Dluzewski, V. Dyakonov +4
The magnetic anisotropy of La0.7Sr0.3MnO3 nanopowders was measured as a function of temperature by the modified singular point detection technique. In this method singularities ind…
Spatially controlled formation of superparamagnetic (Mn,Ga)As nanocrystals in high temperature annealed (Ga,Mn)As/GaAs superlattices
J. Sadowski, J. Z. Domagala, R. Mathieu +2
The annealing-induced formation of (Mn,Ga)As nanocrystals in (Ga,Mn)As/GaAs superlattices was studied by X-ray diffraction, transmission electron microscopy and magnetometry. The s…
Autocatalytic MBE growth of GaAs nanowires on oxidized Si(100)
Janusz Sadowski, Piotr Dluzewski, Janusz Kanski
GaAs nanowires were grown by molecular beam epitaxy on Si(100) substrates covered with 5 nm SiO2. The growth was performed with As4 at low, close to stoichiometric, As4/Ga flux rat…
GaAs:Mn nanowires grown by molecular beam epitaxy of (Ga,Mn)As at MnAs segregation conditions
J. Sadowski, P. Dluzewski, S. Kret +7
GaAs:Mn nanowires were obtained on GaAs(001) and GaAs(111)B substrates by molecular beam epitaxial growth of (Ga,Mn)As at conditions leading to MnAs phase separation. Their density…