Autocatalytic MBE growth of GaAs nanowires on oxidized Si(100)

Janusz Sadowski, Piotr Dluzewski, Janusz Kanski

GaAs nanowires were grown by molecular beam epitaxy on Si(100) substrates covered with 5 nm SiO2. The growth was performed with As4 at low, close to stoichiometric, As4/Ga flux rat…