activity
20082020
most citedSilane-Catalyzed Fast Growth of Large Single-Crystalline Graphene on Hexagonal Boron Nitride

211 citations · 785 across the 16 of their papers we have counts for

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Showing cond-mat.mes-hallShow all

5 papers · 1 filter

cond-mat.mes-hall2020★ 133 cited

Towards Chirality Control of Graphene Nanoribbons Embedded in Hexagonal Boron Nitride

Hui Shan Wang, Lingxiu Chen, Kenan Elibol +16

The integrated inplane growth of two dimensional materials with similar lattices, but distinct electrical properties, could provide a promising route to achieve integrated circuitr…

cond-mat.mes-hall2017★ 156 cited

Oriented Graphene Nanoribbons Embedded in Hexagonal Boron Nitride Trenches

Lingxiu Chen, Li He, Hui Shan Wang +13

Graphene nanoribbons (GNRs) are ultra-narrow strips of graphene that have the potential to be used in high-performance graphene-based semiconductor electronics. However, controlled…

cond-mat.mes-hall2013★ 97 cited

Resonant Low Frequency Interlayer Shear Modes in Folded Graphene Layers

Chunxiao Cong, Ting Yu

Naturally or artificially stacking extra layers on single layer graphene (SLG) forms few-layer graphene (FLG), which has attracted tremendous attention owing to its exceptional pro…

cond-mat.mes-hall2011★ 77 cited

Wafer-scale graphene/ferroelectric hybrid devices for low-voltage electronics

Yi Zheng, Guang-Xin Ni, Sukang Bae +9

Preparing graphene and its derivatives on functional substrates may open enormous opportunities for exploring the intrinsic electronic properties and new functionalities of graphen…

cond-mat.mes-hall2010

Hysteresis of Electronic Transport in Graphene Transistors

Haomin Wang, Yihong Wu, Chunxiao Cong +2

Graphene field effect transistors commonly comprise graphene flakes lying on SiO2 surfaces. The gate-voltage dependent conductance shows hysteresis depending on the gate sweeping r…