most citedQuantum Transport Simulation of Sub-1-nm Gate Length Monolayer MoS2 Transistors

4 citations · 4 across the 3 of their papers we have counts for

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cond-mat.mtrl-sci2023

Sub-5 nm Gate-All-Around InP Nanowire Transistors Towards High-Performance Devices

Linqiang Xu, Lianqiang Xu, Qiuhui Li +7

Gate-all-around (GAA) nanowire (NW) field-effect transistor (FET) is a promising device architecture due to its superior gate controllability than that of the conventional FinFET a…