4 citations · 4 across the 3 of their papers we have counts for
3 papers
cond-mat.mes-hall2024
Symmetric n-and p-Type Sub-5-nm 1D Graphene Nanoribbon Transistors for Homogeneous CMOS Applications
Linqiang Xu, Shiqi Liu, Qiuhui Li +6
Graphene nanoribbon (GNR) emerges as an exceptionally promising channel candidate due to its tunable sizable bandgap (0-3 eV), ultrahigh carrier mobility (up to 4600 cm^(2) V^(-1)…
physics.comp-ph2024★ 4 cited
Quantum Transport Simulation of Sub-1-nm Gate Length Monolayer MoS2 Transistors
Ying Li, Yang Shen, Linqiang Xu +7
Sub-1-nm gate length transistors have been experimentally fabricated, but their device performance limit remains elusive. Herein, we explore the performance limits of the s…
cond-mat.mtrl-sci2023
Sub-5 nm Gate-All-Around InP Nanowire Transistors Towards High-Performance Devices
Linqiang Xu, Lianqiang Xu, Qiuhui Li +7
Gate-all-around (GAA) nanowire (NW) field-effect transistor (FET) is a promising device architecture due to its superior gate controllability than that of the conventional FinFET a…