2 papers
physics.app-ph2024
Formation of a lateral p-n junction light-emitting diode on an n-type high-mobility GaAs/AlGaAs heterostructure
C. P. Dobney, A. Nasir, P. See +5
We have fabricated a device which includes two lateral p-n junctions on an n-type GaAs/AlGaAs heterostructure. A section of the n-type material has been converted…
cond-mat.mes-hall2024
Low frequency resistance fluctuations in an ionic liquid gated channel probed by cross-correlation noise spectroscopy
Bikash C. Barik, Himadri Chakraborti, Aditya K. Jain +4
A system in equilibrium keeps ``exploring" nearby states in the phase space and consequently, fluctuations can contain information, that the mean value does not. However, such meas…