240 citations · 712 across the 12 of their papers we have counts for
6 papers · 1 filter
Quasiparticle bandgap engineering of graphene and graphone on hexagonal boron nitride substrate
Neerav Kharche, Saroj K. Nayak
Graphene holds great promise for post-silicon electronics, however, it faces two main challenges: opening up a bandgap and finding a suitable substrate material. In principle, grap…
Engineered valley-orbit splittings in quantum confined nanostructures in silicon
R. Rahman, J. Verduijn, N. Kharche +4
An important challenge in silicon quantum electronics in the few electron regime is the potentially small energy gap between the ground and excited orbital states in 3D quantum con…
Accurate six-band nearest-neighbor tight-binding model for the pi-bands of bulk graphene and graphene nanoribbons
Timothy B. Boykin, Mathieu Luisier, Gerhard Klimeck +4
Accurate modeling of the pi-bands of armchair graphene nanoribbons (AGNRs) requires correctly reproducing asymmetries in the bulk graphene bands as well as providing a realistic mo…
Multiscale Metrology and Optimization of Ultra-Scaled InAs Quantum Well FETs
Neerav Kharche, Gerhard Klimeck, Dae-Hyun Kim +2
A simulation methodology for ultra-scaled InAs quantum well field effect transistors (QWFETs) is presented and used to provide design guidelines and a path to improve device perfor…
Valley Degeneracies in (111) Silicon Quantum Wells
Neerav Kharche, Seongmin Kim, Timothy B. Boykin +1
(111) Silicon quantum wells have been studied extensively, yet no convincing explanation exists for the experimentally observed breaking of 6 fold valley degeneracy into 2 and 4 fo…
Performance Analysis of a Ge/Si Core/Shell Nanowire Field Effect Transistor
Gengchiau Liang, Jie Xiang, Neerav Kharche +3
We analyze the performance of a recently reported Ge/Si core/shell nanowire transistor using a semiclassical, ballistic transport model and an sp3s*d5 tight-binding treatment of th…