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Spiking Dynamics in Dual Free Layer Perpendicular Magnetic Tunnel Junctions
Louis Farcis, Bruno Teixeira, Philippe Talatchian +8
Spintronic devices have recently attracted a lot of attention in the field of unconventional computing due to their non-volatility for short and long term memory, non-linear fast r…
Field-free all-optical switching and electrical read-out of Tb/Co-based magnetic tunnel junctions
D. Salomoni, Y. Peng, L. Farcis +8
Switching of magnetic tunnel junction using femto-second laser enables a possible path for THz frequency memory operation, which means writing speeds 2 orders of magnitude faster t…
Realizing an Isotropically Coercive Magnetic Layer for Memristive Applications by Analogy to Dry Friction
Marco Mansueto, Antoine Chavent, Stephane Auffret +8
We investigate the possibility of realizing a spintronic memristive device based on the dependence of the tunnel conductance on the relative angle between the magnetization of the…