TCAD Simulation of Novel Multi-Spacer HK/MG 28nm Planar MOSFET for Sub-threshold Swing and DIBL Optimization

Zhentao Xiao, Yihao Zheng, Zonghao Zhang +6

This study optimizes 28 nm planar MOSFET technology to reduce device leakage current and enhance switching speed. The specific aims are to decrease subthreshold swing (S.S.) and mi…